WebSTMicroelectronics - STPSC20H12-Y Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large … WebDescription The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC20H12-Y Datasheet by STMicroelectronics Digi-Key …
Web26 Apr 2024 · Silicon carbide Schottky diodes (STPSC20H12) has been used for the CCS converter. A TI 28069M launchpad digital signal processor controller has been used as the PWM sources. To maintain modularity, and easy debugging and probing during prototype building, the converter was also made as two-part system. Webst意法半导体stpower系列碳化硅二极管,在600v到1200v的电压范围内采用单二极管和双二极管,封装尺寸包括dpak、to-247、陶瓷绝缘型to-220,以及超薄的紧凑型powerflattm 8x8。具有优异的热性能,最大平均整流电流4 a - 20 a,动态特性是标准硅二极管的四倍,而正向电压(vf)比其低15%,工作温度最高至175℃。 create software bill of materials
Datasheet - STPSC20H12 - 1200 V power Schottky silicon …
WebSmart Filtering As you select one or more parametric filters below, Smart Filtering will instantly disable any unselected values that would cause no results to be found. WebSTPSC20H12 Series : Operating Temperature Max 175 : Average Forward Current 20 : Diode Mounting Through Hole : Diode Case Style TO-220AC : Repetitive Peak Reverse Voltage 1.2 : Diode Configuration Single : ECCN / UNSPSC / COO. Description Value; ECCN: EAR99: SCHEDULE B: 8542390000: HTSN: 8542390001 ... Web15 Jun 2024 · The high switching frequency of the SCTW35N65G2V 650V SiC MOSFETs (70 kHz), the adoption of STPSC20H12 1200V SiC diodes, and the multilevel structure allows nearly 99% efficiency as well as the optimization of … do all ovens need to have a vent